Effect of zinc addition and vacuum annealing time on the properties of spin-coated low-cost transparent conducting 1 at% Ga–ZnO thin films
作者： Amit Kumar Srivastava , Jitendra Kumar
DOI: 10.1088/1468-6996/14/6/065002
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摘要: Pure and 1?at% gallium (Ga)-doped zinc oxide (ZnO) thin films have been prepared with a low-cost spin coating technique on quartz substrates annealed at 500??C in vacuum ?10?3?mbar to create anion vacancies generate charge carriers for photovoltaic application. Also, 0.5?1.5?at% extra species were added the precursor sol investigate changes film growth, morphology, optical absorption, electrical properties photoluminescence. It is shown that Ga?ZnO 0.5?at% content after annealing 60?min correspond wurtzite-type hexagonal structure (0001) preferred orientation, resistivity of ?9???10?3???cm transparency ?65?90% visible range. Evidence has advanced presence defect levels within bandgap such as vacancy (VZn), interstitial (Zni), oxygen (Vo) (Oi). Further, variation ZnO occurring Ga doping insertion additional explained by invoking two competing phenomena, namely widening renormalization, usually observed semiconductors increasing carrier concentration.
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