作者: P. C. Findlay , J-P. R. Wells , I. V. Bradley , J. G. Crowder , C. R. Pidgeon
DOI: 10.1103/PHYSREVB.62.10297
关键词:
摘要: Using picosecond pulses from a free-electron laser, we have carried out pump-probe determination of Shockley-Read-Hall (SRH) and Auger free-carrier recombination lifetimes in two long-wave (6--7 \ensuremath{\mu}m) W-structure laser with ${\mathrm{I}\mathrm{n}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}}_{1\ensuremath{-}x}{\mathrm{In}}_{x}\mathrm{S}\mathrm{b}/\mathrm{I}\mathrm{n}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}\mathrm{S}\mathrm{b}$ active regions. The SRH coefficient is nearly constant $(A\ensuremath{\approx}4.0\ifmmode\times\else\texttimes\fi{}{10}^{8}{\mathrm{s}}^{\mathrm{\ensuremath{-}}1}),$ while the has an upper limit $C=4.0\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}27}$ to $2.2\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}27}{\mathrm{cm}}^{6}/\mathrm{s}$ temperature range 40--230 K. This represents order magnitude suppression compared type-I III-V semiconductors same energy gap.