Spectroscopic ellipsometry analysis of GaAs1-xNx layers grown by molecular beam epitaxy

摘要: Abstract In this work, we present the effect of nitrogen incorporation on dielectric function GaAsN samples, grown by molecular beam epitaxy (MBE) followed a rapid thermal annealing (for 90 s at 680 °C). The GaAs1 − xNx samples with N content up to 1.5% (x = 0.0%, 0.1%, 0.5%, 1.5%), are investigated using room temperature spectroscopic ellipsometry (SE). optical transitions in spectral region around 3 eV analyzed fitting analytical critical point line shapes second derivative function. It was found that features associated E1 and E1 + Δ1 blue-shifted become less sharp increasing incorporation, contrast case E0 transition energy GaAs1 − xNx. An increase split-off Δ1 also obtained, agreement results MOVPE samples.