Bulk and surface nucleation processes in Ag2S conductance switches
作者： M. Morales-Masis , S. J. van der Molen , T. Hasegawa , J. M. van Ruitenbeek
DOI: 10.1103/PHYSREVB.84.115310
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摘要: We studied metallic Ag formation inside and on the surface of Ag${}_{2}$S thin films, induced by electric field created with a scanning tunnel microscope (STM) tip. Two clear regimes were observed: cluster at low bias voltages, full conductance switching higher voltages ($V$$g$ 70 mV). The voltage which this transition is observed in agreement known threshold for room temperature. propose model voltage. Scaling measured data proposed indicates that process takes place near steady state, but depends STM tip geometry. growth clusters confirmed retraction measurements topography scans. This study provides improved understanding physical mechanisms drive solid electrolyte memristive devices.
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