Tantalum carbide nitride materials by vapor deposition processes
作者： Haichun Yang , Kavita Shah , Schubert S. Chu
DOI:
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摘要: Embodiments of the invention generally provide compositions tantalum carbide nitride materials. In one embodiment, a composition material is provided which includes chemical formula TaC x N y , wherein within range from about 0.20 to 0.50 and 0.55, an interstitial/elemental carbon atomic ratio 2 or greater, crystalline structure. some examples, provides that 0.25 0.40, preferably, 0.30 0.50, 0.35 0.50. The may be 3, 4, greater. further have sheet resistance 1×10 4 Ω/sq 6 Ω/sq.
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