Semiconductor memory array of floating gate memory cells with program/erase and select gates
作者： Pavel Klinger , Amitay Levi
DOI:
关键词:
摘要: A memory device, and method of making operating the same, including a substrate semiconductor material first conductivity type, second spaced apart regions in type with channel region therebetween, an electrically conductive floating gate having portion disposed over insulated from sharpened edge, P/E extending up therefrom by layer insulation material, select laterally adjacent to region.
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