Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPE
作者： N.H. Karam , V. Haven , S.M. Vernon , N. El-Masry , E.H. Lingunis
DOI: 10.1016/0022-0248(91)90444-A
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摘要: Abstract This paper reports on the effectiveness of selective area epitaxy by conventional MOCVD and atomic layer nucleation techniques in improving quality GaAs Si. The films were deposited through photolithographically patterned openings oxide coated Si wafers. Selective was found to eliminate wafer warpage, reduce film cracking tensile stresses for islands less than 200 μm/side. Complete stress relief has been achieved 10 μm/side after removal. Thermal cycle growth deposition technique employed resulting two orders magnitude reduction dislocation density excellent surface morphologies. potential epitaxy, above techniques, is addressed.
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