Self-supported GaN nanowires with cation-defects, lattice distortion, and abundant active sites for high-rate lithium-ion storage

摘要: Abstract Although cation-deficient nanomaterials, especially one-dimensional (1D) nanowires, have demonstrated to be feasible in electrochemical energy storage as promising electrode materials, the effects of cation defects on charge transfer and performance are not fully explored understood. In this paper, generated as-prepared gallium nitride (GaN) via a cost-effective plasma process, serving reversible active sites boost by simultaneously promoting electrical conductivity transfer. Several techniques, including XRD, TEM, XANES, cyclic voltammetry, Electrochemical impedance spectroscopy, etc., used characterize understand material morphology, structure composition well properties. Results show that GaN nanowires abundant nanochannels, which can facilitate rapid ionic The anode such deliver much higher capacities 746.5 mAh g−1 at 0.1 A g−1 after 100 cycles 370.2 10 A g−1 1000 cycles, respectively. Density functional theory (DFT) calculations prove benefited from unique self-supported 1D architecture defects, local atomic arrangement electronic tuned significantly increase efficiency subsequently lithium-ion for batteries. This strategy provides an accessible approach utilize cation-defect nanomaterials advanced applications.