Carrier confinement in AlGaN non‐abrupt heterostructured nanowires

摘要: We present theoretical calculations on the confinement of electrons and holes in an AlGaN quantum well inside AlN wire within effective mass approximation. Energy levels (ground state two excited states) corresponding wavefunctions are obtained, energy dependence radius, thickness interface is calculated. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)