Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
作者： W.-H. Chang , T. M. Hsu , C. C. Huang , S. L. Hsu , C. Y. Lai
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摘要: We present a temperature- and bias-dependent photocurrent study of the excitonic interband transitions InAs self-assembled quantum dots (QD's). It was found that carrier escape process from QD's is dominated by hole processes. The main path for this to be thermal-assisted tunneling, dot level GaAs barrier via wetting layer as an intermediate state. Energy-dependent tunneling observed at low temperatures. Energy shifts due size-selective effect quantum-confined Stark are discussed compared with redistribution in photoluminescence measurements.
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