Self-doping and magnetic ordering induced by extended line defects in graphene

摘要: Based on first-principles calculations, we reveal that the interactions between extended line defects (ELDs) of type ``585'' (formed by five and eight membered rings) ELDs embedded in graphene can induce ordered magnetism self-doping graphene. By reducing distance 585 ELDs, a distinct charge transfer is predicted from center to their edges, which induces Dirac point shift below Fermi level, resulting distance- or density-dependent $n$-type doping Relevant above finding, found distance-dependent spin polarization at edges attributable rigidity \ensuremath{\pi} electronic structure. Our finding suggests promising approach for achieving spintronic devices creating ELDs.