Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck
作者： Kohki Mukai , Nobuyuki Ohtsuka , Hajime Shoji , Mitsuru Sugawara
DOI: 10.1063/1.116681
关键词:
摘要: We studied the excitation‐power dependence of photoluminescence (PL) spectra and current electroluminescence (EL) self‐formed InGaAs/GaAs quantum dots. observed five peaks in PL EL spectra. From size peak interval carrier‐density energy intensity, we assigned to discrete levels simulated with rate equations, taking into account carrier relaxation between levels, found that lifetime was about 10–100 ps.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(0)