Principles and Early Historical Development of Silicon Avalanche and Geiger-Mode Photodiodes

作者: Edward M.D. Fisher

DOI: 10.5772/INTECHOPEN.72148

关键词:

摘要:

参考文章(103)
D. Hamilton, J. Gibbons, W. Shockley, Physical principles of avalanche transistor pulse circuits international solid-state circuits conference. pp. 92- 93 ,(1959) , 10.1109/ISSCC.1959.1157029
K. Johnson, Photodiode signal enhancement effect at avalanche breakdown voltage international solid-state circuits conference. pp. 64- 65 ,(1964) , 10.1109/ISSCC.1964.1157526
Roland H. Haitz, Microplasma interaction in silicon p-n junctions Solid-State Electronics. ,vol. 7, pp. 439- 444 ,(1964) , 10.1016/0038-1101(64)90041-3
R. J. McIntyre, Theory of Microplasma Instability in Silicon Journal of Applied Physics. ,vol. 32, pp. 983- 995 ,(1961) , 10.1063/1.1736199
Ove Christensen, Quantum efficiency of the internal photoelectric effect in silicon and germanium Journal of Applied Physics. ,vol. 47, pp. 689- 695 ,(1976) , 10.1063/1.322635
Gerald C. Huth, Recent Results Obtained with High Field, Internally Amplifying Semiconductor Radiation Detectors IEEE Transactions on Nuclear Science. ,vol. 13, pp. 36- 42 ,(1966) , 10.1109/TNS.1966.4323942
S. Cova, M. Ghioni, A. Lacaita, C. Samori, F. Zappa, Avalanche photodiodes and quenching circuits for single-photon detection Applied Optics. ,vol. 35, pp. 1956- 1976 ,(1996) , 10.1364/AO.35.001956