High dynamic range charge readout system

摘要: A solid-state image sensor has a readout architecture that incorporates charge multiplier cells into horizontal register of CCD sensor, and includes first adjacent to at least second coupled the said through overflow barrier. high Dynamic Range system results in which DR is not restricted by voltage swing limitations on detection node. As multiplied, structure increases width more multiplication gates are added per stage. region follows multiplier. In this amount exceeds certain predetermined threshold split off another register. node different conversion sensitivity may terminate The process splitting continue for than two steps.