Analysis of the broadening of photoluminescence spectra in porous silicon as a function of growth parameters
作者： Vivechana Agarwal , R.M. Mehra , P.C. Mathur
DOI: 10.1016/S0040-6090(99)00710-5
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摘要: Abstract The systematic change in the shape of photoluminescence (PL) spectra with growth parameters for self-supporting porous silicon (PS) and PS layer on Si substrate has been observed mathematically analysed. PL behaviour is attributed to quantum size effect concentration dots wires. It found that layers consists columns only. For grown substrate, was increase a decrease electrolyte. mean diameter crystallites ranged from 20–30 A hence variation confinement energy 0.55 0.95 eV. more than substrate. variance formed during anodisation, calculated separately
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M. Voos, Ph. Uzan, C. Delalande, G. Bastard, A. Halimaoui, Visible photoluminescence from porous silicon: A quantum confinement effect mainly due to holes? Applied Physics Letters. ,vol. 61, pp. 1213- 1215 ,(1992) , 10.1063/1.107598
R.M Mehra, Vivechana Agarwal, V.K Jain, P.C Mathur, Influence of anodisation time, current density and electrolyte concentration on the photoconductivity spectra of porous silicon Thin Solid Films. ,vol. 315, pp. 281- 285 ,(1998) , 10.1016/S0040-6090(97)00756-6
K. L. Narasimhan, S. Banerjee, A. K. Srivastava, A. Sardesai, Anomalous temperature dependence of photoluminescence in porous silicon Applied Physics Letters. ,vol. 62, pp. 331- 333 ,(1993) , 10.1063/1.108949
A. G. Cullis, L. T. Canham, Visible light emission due to quantum size effects in highly porous crystalline silicon Nature. ,vol. 353, pp. 335- 338 ,(1991) , 10.1038/353335A0
David J. Lockwood, Ai Guo Wang, Quantum confinement induced photoluminescence in porous silicon Solid State Communications. ,vol. 94, pp. 905- 909 ,(1995) , 10.1016/0038-1098(95)00186-7
A. Halimaoui, Determination of the specific surface area of porous silicon from its etch rate in HF solutions Surface Science. ,vol. 306, ,(1994) , 10.1016/0039-6028(94)91176-2
J. Klafter, A. Blumen, Fractal behavior in trapping and reaction Journal of Chemical Physics. ,vol. 80, pp. 875- 877 ,(1984) , 10.1063/1.446743
D. Papadimitriou, Y. S. Raptis, A. G. Nassiopoulou, G. Kaltsas, Porous Silicon of Variable Porosity under High Hydrostatic Pressure: Raman and Photoluminescence Studies Physica Status Solidi (a). ,vol. 165, pp. 43- 48 ,(1998) , 10.1002/(SICI)1521-396X(199801)165:1<43::AID-PSSA43>3.0.CO;2-K
F. Ozanam, R. B. Wehrspohn, J.-N. Chazalviel, I. Solomon, Light Emitting Porous Silicon from Hydrogenated Amorphous Silicon Physica Status Solidi (a). ,vol. 165, pp. 15- 24 ,(1998) , 10.1002/(SICI)1521-396X(199801)165:1<15::AID-PSSA15>3.0.CO;2-E
J. P. Proot, C. Delerue, G. Allan, Electronic structure and optical properties of silicon crystallites: Application to porous silicon Applied Physics Letters. ,vol. 61, pp. 1948- 1950 ,(1992) , 10.1063/1.108372