Growth of Ti3SiC2 thin films by elemental target magnetron sputtering
作者： Jens Emmerlich , Hans Högberg , Szilvia Sasvári , Per O. Å. Persson , Lars Hultman
DOI: 10.1063/1.1790571
关键词:
摘要: Epitaxial Ti3SiC2(0001) thin films have been deposited by dc magnetron sputtering from three elemental targets of Ti, C, and Si onto MgO(111) Al2O3(0001) substrates at temperatures 800–900°C. This process allows composition control to synthesize Mn+1AXn (MAX) phases (M: early transition metal; A: A-group element; X: C and∕or N; n=1–3) including Ti4SiC3. Depositions on MgO(100) yielding the Ti–Si–C MAX with (101¯5), as preferred orientation. Samples grown different substrate temperatures, studied means transmission electron microscopy x-ray diffraction investigations, revealed constraints Ti3SiC2 nucleation due kinetic limitations below 700°C. Instead, there is a competitive TiCx growth segregation form twin boundaries or substitutional incorporation in TiCx. Physical properties as-deposited single-crystal were determined. A low resistivity 25μΩcm was measured. The Young’s modulus, ascertaine...
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