Initial growth process of carbon nanowalls synthesized by radical injection plasma-enhanced chemical vapor deposition

摘要: We synthesized carbon nanowalls (CNWs) using radical injection plasma-enhanced chemical vapor deposition. The initial growth process of CNWs was investigated with and without O2 gas addition to a C2F6 capacitively coupled plasma H injection. In the case CNW synthesis gas, scanning electron microscopy (SEM), transmission microscopy, x-ray photoelectron spectroscopy (XPS), Raman revealed that 10-nm-thick interface layer composed nanoislands formed on Si substrate approximately 1 min prior formation. contrast, addition, SEM XPS an not were grown directly from nanoislands. Moreover, suggested amorphous during is effective for achieving high graphitization CNWs. Therefore, has effect reducing amorphicity disorder controlling nucleation.