Transport properties of InSex flash evaporated thin films
作者： C. Julien , A. Khelfa , N. Benramdane , J. P. Guesdon
DOI: 10.1007/BF01154500
关键词:
摘要: Thin films of InSexwere obtained by vacuum evaporation polycrystalline materials onto substrates at moderate temperatures,Ts. Electrical properties grown from different stoichiometries flash source are reported in this work. The temperature dependence the conductivities shows two conduction regimes. low regime exhibits aT−1/4 conductivity which fits well, using Mott model, with an average localized states density value ofN(EF) ≈ 8×1018cm−3eV−1. Hall measurements as a function show that predominant mechanism is scattering grain boundaries polycystalline films.
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