Investigation of the Trap-Induced Power Conversion Limit for CdS/CdSe Cascade Quantum Dot Sensitized Solar Cells Fabricated by Using the Successive Ionic Layer Adsorption and Reaction Process
作者： Dongho Lee , Wonjoon Choi , JungYup Yang
DOI: 10.3938/JKPS.76.1133
关键词:
摘要: CdS/CdSe quantum dot sensitized solar cells (QDSSC) fabricated by successive ionic layer adsorption and reaction (SILAR) processes was investigated, a rate-equation model for the trapinduced power conversion efficiency (PCE) limit developed used to explain experimental results. The cascade structure with CdS:CdSe (7:7) cycle ratio showed highest PCE of 2.55%. However, excess cycles CdSe beyond optimum condition decrease device performance. current loss when exceeding maximum is attributed trap-induced charge field that impedes carrier extraction from absorber titanium dioxide (TiO2) increases recombination due dislocation generation critical thickness pseudomorphic growth exceeded. simulation results show increase in number dislocations rate transfer at interface between TiO2 QDs.
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