A field-induced semiconductor quantum dot defined by a single metallic front-gate

摘要: We present studies on the electronic transport in a quantum dot based back-gated undoped GaAs/AlGaAs heterostructure. A high-quality two-dimensional electron gas can be induced structure by applying back-gate voltage. The is well defined means of single metallic front-gate. observe clear regions Coulomb blockade and pronounced tunneling peaks broad range source–drain front-gate voltages. formation energetic evolution associated are studied as function applied Excellent agreement to calculated diamond pattern using ‘constant interaction model’ achieved, if voltage dependent change capacitance taken into account.