Photon-assisted multiple-Andreev reflections in high-Jc NbN/AlN/NbN tunnel junctions
作者： K Okanoue , H. Ishida , K. Hamasaki , A. Kawakami , Z. Wang
DOI: 10.1016/J.PHYSC.2004.02.228
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摘要: Abstract Interplay between microwave field and Andreev current in epitaxial NbN/AlN/NbN tunnel junctions have been investigated. The subharmonic-gap structures (d V /d I dip-structures) were clearly observed for almost all without field, the voltage positions of d dips well explained by Octavio, Tinkham, Blonder Klapwijk (OTBK) theory based on multiple-Andreev reflection (MAR). In presence – curve only a high- J c (5 kA/cm 2 ) junction has rich subgap structure due to photon-assisted MAR. microwave-induced was qualitatively OTBK with an effective time-dependent model.
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