Pulse Deficit Correction Trigger for Planar CdTe

摘要: Planar CdTe produces gamma-ray spectra that typically exhibit tailing on the low energy side of photopeaks above 100 keV due to material's asymmetric transfer properties electrons and holes. XRF Corporation has recently developed submitted a patent for novel trigger methodology corrects charge deficit photon interactions across full depth crystal. This also improves resolution so we are able produce devices yield width at half-maximum (FWHM) 1% 662 using entire bulk new been incorporated into Corporation's ICS-4000 radionuclide identifier improving both sensitivity device. I. INTRODUCTION oom temperature semiconductor gamma ray detectors have in use many years several advantages over other technologies employed detection. Semiconductor detector crystals good robust against change vibration. CdZnTe primary room materials common use. The simplest geometry is planar crystal with conducting surfaces opposing faces. A bias voltage applied faces attract carriers released by interaction high photon. number direct proportion incident can be measured as voltage. well known problem these their tail photopeaks. reduces collection efficiency spectral an asymmetry transport electron hole carriers. signal induced contacts product amount multiplied its travel distance, being sum signals resulting from travel. accurately represents function interaction, whereas slower moving lifetimes may short respect time crystal, contribution deficit. In simple