Tunneling Between Bilayers of Graphene
作者： Sergio C. de la Barrera
DOI: 10.1007/978-3-319-69257-9_8
关键词:
摘要: In this chapter, a theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by thin, insulating layer hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison the with recently reported experimental results. The observed resonant and negative differential resistance in current–voltage characteristics explained terms electrostatically-induced band gap, gate voltage modulation, density states near edge, resonances upper sub-band. These observations compared to ones from similar heterostructures formed monolayer graphene.
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