A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

摘要: A new detection scheme for cathodoluminescence is presented which utilizes a large area photodiode attached to the objective pole piece of scanning electron microscope. Due geometrical arrangement, emission in almost all upper halfsphere detected. Cathodoluminescence images at room temperature are recorded specimen currents as low 3 nA case AlGaAs heterostructures. The detector operates half TV rate resulting good visual images. high collection efficiency should enlarge application possibilities include materials with and/or beam sensitivity.