Stable bismuth sub-monolayer termination of Bi2Se3
作者： M. Hermanowicz , W. Koczorowski , M. Bazarnik , M. Kopciuszyński , R. Zdyb
DOI: 10.1016/J.APSUSC.2019.01.011
关键词:
摘要: Abstract Surface electronic properties of Bi2Se3 and Bi2Te3 topological insulators are known to evolve with varying surface termination. In this work, the (1 1 1) has been studied a comprehensive combination experimental computational (density functional theory) methods. It demonstrated that proper preparation conditions system can be forced into new stable termination – sub-monolayer bismuth acquired through selective Se desorption which not explored yet.
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