Effect of selenium incorporation at precursor stage on growth and properties of Cu2ZnSnSe4 thin films
作者： Dipak Ramdas Nagapure , Rhishikesh Mahadev Patil , G. Swapna Mary , G. Hema Chandra , M. Anantha Sunil
DOI: 10.1016/J.VACUUM.2017.07.014
关键词:
摘要: In the present work, effect of selenium incorporation in between Sn-ZnSe-Cu precursor layers on growth Cu2ZnSnSe4 thin films by employing selenization is reported. Multiple stacks precursors (Sn/Se/ZnSe/Se/Cu/Se) were sequentially evaporated high vacuum onto soda lime glass substrates held at 100 degrees C and their subsequent 350 using a tubular furnace led to complete crystallization into single phase films. X-ray diffraction pattern stacked selenized revealed formation kesterite-type with preferred orientation along (112) plane. Raman analysis multi wavelength excitation confirms CZTSe Secondary ion mass spectroscopy (SIMS) depth profiles illustrated fairly uniform distribution constituent elements. Optical absorption studies showed an optical band gap 0.97 eV coefficient (> 10(4)cm(-1)). The electrical properties exhibited p-type conductivity resistivity 4.18 Omega cm, mobility 11.3 cm(2)(Vs)(-1) carrier concentration 1.32 x 10(17) cm(-3). Our approach results would open new way for synthesis directly plastic substrates. (c) 2017 Elsevier Ltd. All rights reserved.
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