作者: James W. Corbett , Jacques C. Bourgoin
DOI: 10.1007/978-1-4684-0904-8_1
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摘要: In this chapter we will focus on the physics of defect creation process in semiconductors. its broadest interpretation topic can encompass all radiation effects semiconductors; other chapters treatise cover many these aspects, and consequently adopt a narrower view topic, considering question, “How are defects created?,” reserving for ourselves right to draw areas where necessary.