Defect Creation in Semiconductors

作者: James W. Corbett , Jacques C. Bourgoin

DOI: 10.1007/978-1-4684-0904-8_1

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摘要: In this chapter we will focus on the physics of defect creation process in semiconductors. its broadest interpretation topic can encompass all radiation effects semiconductors; other chapters treatise cover many these aspects, and consequently adopt a narrower view topic, considering question, “How are defects created?,” reserving for ourselves right to draw areas where necessary.

参考文章(248)
W. S. Snyder, Jacob Neufeld, Vacancies and Displacements in a Solid Resulting from Heavy Corpuscular Radiation Physical Review. ,vol. 103, pp. 862- 864 ,(1956) , 10.1103/PHYSREV.103.862
G. K. Wertheim, Temperature-Dependent Defect Production in Bombardment of Semiconductors Physical Review. ,vol. 115, pp. 568- 569 ,(1959) , 10.1103/PHYSREV.115.568
R. Bäuerlein, Untersuchungen über den Ausheilvorgang von Frenkel-Fehlstellen in Indiumarsenid Zeitschrift für Naturforschung A. ,vol. 16, pp. 1002- 1008 ,(1961) , 10.1515/ZNA-1961-1006
John A. Baldwin, Two New Paramagnetic Centers in Irradiated, Oxygen‐Doped Germanium Journal of Applied Physics. ,vol. 36, pp. 2079- 2079 ,(1965) , 10.1063/1.1714408
A.L. Taylor, G. Filipovich, G.K. Lindeberg, Electron paramagnetic resonance associated with Zn vacancies in neutron-irradiated ZnO Solid State Communications. ,vol. 8, pp. 1359- 1361 ,(1970) , 10.1016/0038-1098(70)90042-6
R. R. Hasiguti, S. Motomiya, Estimation of the true formation energy of a vacancy in germanium Radiation Effects and Defects in Solids. ,vol. 9, pp. 25- 25 ,(1971) , 10.1080/00337577108242026
C. M. Jimenez, L. F. Lowe, E. A. Burke, C. H. Sherman, Radiation Damage in Pd Produced by 1-3-MeV Electrons Physical Review. ,vol. 153, pp. 735- 740 ,(1967) , 10.1103/PHYSREV.153.735
Robert S. Mulliken, Overlap and Bonding Power of 2s,2p‐Hybrid Orbitals The Journal of Chemical Physics. ,vol. 19, pp. 900- 912 ,(1951) , 10.1063/1.1748405
E. I. Blount, ENERGY LEVELS IN IRRADIATED GERMANIUM Physical Review. ,vol. 113, pp. 995- 998 ,(1959) , 10.1103/PHYSREV.113.995