Tetrahedral amorphous carbon films prepared by magnetron sputtering and dc ion plating

摘要: Highly tetrahedral, dense amorphous carbon (ta‐C) films have been deposited using rf sputtering of graphite by an unbalanced magnetron with intense dc Ar‐ion plating at low temperatures (<70 °C). The ratio the argon ion flux to neutral Φi/Φn is about 5. film density and compressive stress are found pass through a maximum 2.7 g/cm3 16 GPa, respectively, energy 100 eV. Experiments higher ratios Φi/Φn=10 show that it possible deposit densities up 3.1 sp3 contents 87%. Deposition ta‐C in this experiment when energetic species Ar appears require minimum 14 GPa create significant bonding, which contrasts continuous increase content C ions themselves. These results used discuss deposition mechanisms.