作者: J. G. Williamson , C. E. Timmering , C. J. P. M. Harmans , J. J. Harris , C. T. Foxon
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摘要: Quantum point contacts, shifted laterally by \ifmmode\pm\else\textpm\fi{}50 nm have been used to study the local electrostatic potential in two-dimensional electron gas of a GaAs-${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As heterostructure. The resistance quantized plateaux is observed vary with this lateral position. In one device an alternate suppression observed, which we interpret as being due overlap strong fuctuations transverse profile wave functions quantum contact.