Numerical simulations for high efficiency HIT solar cells using microcrystalline silicon as emitter and back surface field (BSF) layers
作者： Arti Rawat , Mansi Sharma , Deepika Chaudhary , S. Sudhakar , Sushil Kumar
DOI: 10.1016/J.SOLENER.2014.10.004
关键词:
摘要: Abstract In present article the influence of thickness and band gap microcrystalline silicon emitter layer, amorphous front back intrinsic layers p-type crystalline (c-Si) wafer on performance TCO/μc-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/μc-Si:H(p+)/Ag Heterojunction with thin layer (HIT) solar cell along other structural possibilities were investigated through computer simulations using AFORS-HET software. These revealed importance inclusion a-Si:H in improving help interface passivation. Also BSF can raise conversion efficiency more than 4% compared to HIT having no layer. Highest stable 24.12% for substrate based HITBSF (HIT surface field) cells was observed. Furthermore effect textured transparent conductive oxide (TCO) where enhanced light trapping observed use TCO which raised cells. optimizations may fabricating μc-Si efficiencies possibly degraded as case structures studied so far.
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