Investigation of the interstitial site in As+-ion-implanted GaAs by means of a multidirectional and high-depth resolution RBS/channelling technique
作者： J Nishizawa , I Shiota , Y Oyama
DOI: 10.1088/0022-3719/19/1/006
关键词:
摘要: The double-yield peak and the site exchange of responsible interstitial atoms on annealing have been observed for first time in a low-dose As+-ion-implanted GaAs crystal by means high-depth resolution multidirectional Rutherford back-scattering (RBS)/channelling technique. newly second is located deeper than conventional around projected range Rp. After at 200-250 degrees C, it found that both peaks change their sites during aging low temperature (RT approximately 40 C) occupy more stable bond-centred mixed split (100) one peak. It concluded may be most even higher temperature.
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sci-hub.se 参考文章(10)
W. Frank, Interstitial properties deduced from internal friction measurements on boron-implanted silicon Radiation Effects and Defects in Solids. ,vol. 21, pp. 119- 133 ,(1974) , 10.1080/10420157408230820
Jun-ichi Nishizawa, Hideo Otsuka, Shigenobu Yamakoshi, Katsuhiko Ishida, Nonstoichiometry of Te-Doped GaAs Japanese Journal of Applied Physics. ,vol. 13, pp. 46- 56 ,(1974) , 10.1143/JJAP.13.46
J. U. Andersen, O. Andreasen, J. A. Davies, E. Uggerh⊘j, The use of channeling-effect techniques to locate interstitial foreign atoms in silicon Radiation Effects and Defects in Solids. ,vol. 7, pp. 25- 34 ,(1971) , 10.1080/00337577108232561
D. Lecrosnier, Gettering by ion implantation Nuclear Instruments and Methods in Physics Research. pp. 325- 332 ,(1983) , 10.1016/0167-5087(83)90819-0
J.S. Williams, The application of high-resolution Rutherford backscattering techniques to near-surface analysis Nuclear Instruments and Methods. ,vol. 149, pp. 207- 217 ,(1978) , 10.1016/0029-554X(78)90862-5
Young-Hoon Lee, Nikolai N. Gerasimenko, James W. Corbett, EPR study of neutron-irradiated silicon: A positive charge state of the 〈 100 〉 split di-interstitial Physical Review B. ,vol. 14, pp. 4506- 4520 ,(1976) , 10.1103/PHYSREVB.14.4506
Isao Fujimoto, Characterisation of Stoichiometry in GaAs by X-Ray Intensity Measurements of Quasi-Forbidden Reflections Japanese Journal of Applied Physics. ,vol. 23, pp. L287- L289 ,(1984) , 10.1143/JJAP.23.L287
Y. I. Nissim, L. A. Christel, T. W. Sigmon, J. F. Gibbons, T. J. Magee, R. Ormond, Solid‐phase epitaxial regrowth of ion‐implanted layers in GaAs Applied Physics Letters. ,vol. 39, pp. 598- 600 ,(1981) , 10.1063/1.92816
M. Gauneau, H. L’Haridon, A. Rupert, M. Salvi, Depth profiles of Fe and Cr implants in InP after annealing Journal of Applied Physics. ,vol. 53, pp. 6823- 6827 ,(1982) , 10.1063/1.330071
M. G. Grimaldi, B. M. Paine, M‐A. Nicolet, D. K. Sadana, Ion implantation and low‐temperature epitaxial regrowth of GaAs Journal of Applied Physics. ,vol. 52, pp. 4038- 4046 ,(1981) , 10.1063/1.329213