作者: P. Ondrejkovic , M. Kempa , Y. Vysochanskii , P. Saint-Grégoire , P. Bourges
DOI: 10.1103/PHYSREVB.86.224106
关键词:
摘要: Ferroelectric phase transition in the semiconductor Sn2P2S6 single crystal has been studied by means of neutron scattering pressure-temperature range adjacent to anticipated tricritical Lifshitz point (p=0.18GPa, T=296K). The observations reveal a direct ferroelectric-paraelectric whole investigated pressure (0.18 - 0.6GPa). These results are clear disagreement with diagrams assumed numerous earlier works, according which hypothetical intermediate incommensurate extends over several or even tens degrees 0.5GPa range. Temperature dependence anisotropic quasielastic diffuse suggests that polarization fluctuations present above TC strongly reduced ordered phase. Still, temperature (200) Bragg reflection intensity at p=0.18GPa can be remarkably well modeled assuming order-parameter amplitude growth power law logarithmic corrections predicted for uniaxial ferroelectric point.