MODEL ON SIZE/TYPE CONVERSION OF STACKING-FAULTED HALF ON QUENCHED Si(111) SURFACE
作者： T. KATO , M. UCHIBE , W. SHIMADA , H. TOCHIHARA
DOI: 10.1142/S0218625X99001128
关键词:
摘要: Recent revelation on even-sized stacking-faulted halves as well irregular odd-sized ones the quenched Si(111) surface is theoretically studied. The employed model for analysis an extended version of cell which was proposed to interpret phase transition 7×7 structure in terms formation energy each element DAS structure. probability distributions various sizes/types are calculated corresponding situations experiment. qualitatively coincident with experimental result.
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sci-hub.se 参考文章(12)
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