Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
作者： Stefan Petzold , Alexander Zintler , Robert Eilhardt , Eszter Piros , Nico Kaiser
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摘要: … approaches can be divided in two types: In the first type, the oxygen content is controlled … boundary engineering is to provide a perfect predefined nucleation path for oxygen defects …
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