摘要: Using gaseous sources in molecular beam epitaxy (MBE) extends the versatility of solid-source MBE. We first describe use group V hydrides, which makes growth phosphides possible (before very recent development valved crackers). New issues arise, however; for example, As/P exchange at arsenide/phosphide interfaces and controlling composition a mixed As+P alloy. Then we discuss organometallic IE selective-area epitaxy, either by laser irradiation or on patterned substrates. Finally dopant are described, particular, carbon doping with halomethanes.
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