Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
作者： Jung Wook Lim , Sun Jin Yun
DOI: 10.1149/1.1756541
关键词:
摘要: Plasma-enhanced atomic layer deposition (PEALD) technique using trimethylaluminum (TMA) precursors and O 2 gas mixed with N gas, was adopted as a promising method for growing Al 3 thin films improved electrical properties compared to the conventional ALD. PEALD provides higher growth rate of 0.18 nm/cycle than ALD does 0.11 at 100°C. Due superior film density that ALD, excellent breakdown fields 9 MV/cm were obtained in . The dielectric constants grown by also produced
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