Comparison of high vacuum and ultra‐high‐vacuum tantalum diffusion barrier performance against copper penetration

摘要: We demonstrate that depositing Ta diffusion barriers under ultra‐high vacuum conditions without in situ oxygen dosing allows for variations both microstructure and the concentration of chemical impurities severely degrade barrier performance. The effects deposition pressure, at interfaces, hydrogen contamination, on performance to Cu electron‐beam deposited are presented. 20 nm followed by a 150 conductor were (UHV, pressure 1×10−9 5 ×10−8 Torr) high (HV, 1×10−7 5×10−6 onto 〈100〉 Si. In resistance furnace measurements, Auger compositional depth profiling, secondary ion mass spectrometry, forward recoil detection along with scanning transmission electron microscopy used determine electrical, chemical, structural changes occurred thin‐film...