Conductivity storage in CdS

摘要: A model for conductivity storage in CdS is proposed. It involves a level from which electrons are excited while the collection of these by receiving accompanied local crystal deformation allowing quasi-equilibrium state, stored represents, to be set up. Published literature dealing with sensitivity electrical properties thermal or mechanical stress lends credibility model. Various techniques photoelectronic analysis used obtain values 5 × 10−16 cm2 photon-capture cross section and 10−30 recapture carrier. Storage densities ranged 1016 1019 cm−3 various crystals.