Quantum Dots of Indium Nitrides with Special Magneto-Optic Properties

摘要: Functionality of low-dimensional structures indium nitrides can be significantly modified by substitution doping with atoms “magnetic” elements, such as Ni or Co. Quantum many-body field theoretical studies electron energy level structure (ELS), molecular electrostatic potential (MEP), and charge spin density distributions (CDDs SDDs, respectively) small InAsN InN (QDs) containing Co show that systems possess uncompensated magnetic moment comparable larger than similar QDs Mn V studied in Chapter 5. At the same time, spins nitride doped are localized vicinity atoms, rather delocalized near In bulk QDs, which is typical for “diluted semiconductor” Moreover, only a few Ni- Co- develop deficit regions (holes), signifying nanostructures thin films composed may have bright prospects applications. particular, recording devices spintronics presence significant mission crucial, while electrons carriers preferred over holes many cases. Similar to case undoped nitrides, accumulated nitrogen nickel inside where not accumulate on themselves, but also contribute dramatically re-distribution carried toward atoms. As result, ground state Ni-doped QD about 158 H per atom lower their counterparts 6, increased stability systems.