Free carrier and many-body effects in absorption spectra of modulation-doped quantum wells
作者： G. Livescu , D.A.B. Miller , D.S. Chemla , M. Ramaswamy , T.Y. Chang
DOI: 10.1109/3.7098
关键词:
摘要: The temperature-dependent optical absorption and luminescence spectra of GaAs/AlGaAs InGaAs/InAlAs n-doped modulation-doped quantum wells is discussed with emphasis on the peak seen at edge these samples. A many-body calculation electron-hole correlation enhancement presented, which identifies this Mahan exciton-the result Coulomb interaction between photoexcited hole in valence band sea electrons conduction band. This accounts for strong dependence both temperature carrier concentration, good qualitative agreement experimental data previously published results. changes induced by carriers subband structure through self-consistent calculations are also analyzed, it concluded that symmetric structures, small achievable densities. >
harvard.edu
sci-hub.se 参考文章(44)
W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, K. Ploog, Absorption spectroscopy on Ga 0.47 In 0.53 As/ Al 0.48 In 0.52 As multi-quantum-well heterostructures. II. Subband structure Physical Review B. ,vol. 36, pp. 4310- 4315 ,(1987) , 10.1103/PHYSREVB.36.4310
D. Huang, H. Y. Chu, Y. C. Chang, R. Houdré, H. Morkoç, Excitonic absorption in modulation-doped GaAs/AlxGa Physical Review B. ,vol. 38, pp. 1246- 1250 ,(1988) , 10.1103/PHYSREVB.38.1246
C. Delalande, J. Orgonasi, M.H. Meynadier, J.A. Brum, G. Bastard, G. Welmann, W. Schlapp, Band gap renormalization in a GaAs-Ga1−xAlxAs modulation doped quantum well Solid State Communications. ,vol. 59, pp. 613- 617 ,(1986) , 10.1016/0038-1098(86)90043-8
M. S. Skolnick, K. J. Nash, P. R. Tapster, D. J. Mowbray, S. J. Bass, A. D. Pitt, Free-carrier screening of the interaction between excitons and longitudinal-optical phonons in InxGa1-xAs-InP quantum wells. Physical Review B. ,vol. 35, pp. 5925- 5928 ,(1987) , 10.1103/PHYSREVB.35.5925
R. Sooryakumar, D.S. Chemla, A. Pinczuk, A.C. Gossard, W. Wiegmann, L.J. Sham, Valence band mixing in GaAs-(AlGa)As heterostructures Solid State Communications. ,vol. 54, pp. 859- 862 ,(1985) , 10.1016/0038-1098(85)91156-1
A. E. Ruckenstein, S. Schmitt-Rink, R. C. Miller, Infrared and polarization anomalies in the optical spectra of modulation-doped semiconductor quantum-well structures Physical Review Letters. ,vol. 56, pp. 504- 507 ,(1986) , 10.1103/PHYSREVLETT.56.504
B. ROULET, J. GAVORET, P. NOZIÈRES, Singularities in the X-Ray Absorption and Emission of Metals. I. First-Order Parquet Calculation Physical Review. ,vol. 178, pp. 1072- 1083 ,(1969) , 10.1103/PHYSREV.178.1072
S. Schmitt-Rink, C. Ell, Excitons and electron-hole plasma in quasi-two-dimensional systems Journal of Luminescence. ,vol. 30, pp. 585- 596 ,(1985) , 10.1016/0022-2313(85)90080-8
R. Sooryakumar, A. Pinczuk, A. C. Gossard, D. S. Chemla, L. J. Sham, Tuning of the valence-band structure of GaAs quantum wells by uniaxial stress. Physical Review Letters. ,vol. 58, pp. 1150- 1153 ,(1987) , 10.1103/PHYSREVLETT.58.1150
C Delalande, Optical Properties of Modulation-Doped Quantum Wells Physica Scripta. ,vol. 1987, pp. 129- 135 ,(1987) , 10.1088/0031-8949/1987/T19A/019