Physical vapor growth of organic semiconductors
作者： R.A Laudise , Ch Kloc , P.G Simpkins , T Siegrist
DOI: 10.1016/S0022-0248(98)00034-7
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摘要: Physical vapor growth in horizontal and vertical systems has been used to grow crystals of α-hexathiophene (α-6T), α-octithiophene (α-8T), α-quaterthiophene (α-4T), pentacene, anthracene and copper phthalocyanine. Using 10–30mg of starting material, mm–cm sized crystals, suitable for characterization measurements, have been grown. New polymorphs of α-quaterthiophene (high temperature, HT and low temperature, LT) and pentacene were discovered. A horizontal geometry is shown to be advantageous because the fragile crystals …
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