Modeling of the sheath and the energy distribution of ions bombarding rf-biased substrates in high density plasma reactors and comparison to experimental measurements

摘要: In plasma etching and deposition processes, the energy distribution of ions incident onto substrate strongly affects surface reactions film rates. The magnitude frequency rf-bias power applied to electrode determines spatiotemporal variations sheath potentials hence impinging upon substrate. A self-consistent dynamic model sheath, capable predicting ion distributions on a rf-biased electrode, was developed. consists equations describing charge transport in coupled an equivalent circuit predict potential near surface. Experimental measurements electrostatic chuck have also been made high density transformer reactor through Ar Ne plasmas. predicted profiles are very good agreement with experimental measurements.