Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors
作者： Feng Xu , Ao Liu , Guoxia Liu , Byoungchul Shin , Fukai Shan
DOI: 10.1016/J.CERAMINT.2015.03.120
关键词:
摘要: Abstract In this paper, we report the annealing effects on micro-structure and electrical properties of sol–gel-derived Y 2 O 3 thin films further impact InZnO film transistors (IZO TFTs). The annealed at 400 °C showed a low current density ~10 −8 A/cm an applied voltage 1 V. A relative high capacitance 345.7 nF/cm , measured 1 kHz, was obtained for same capacitor. Based its potential as dielectric layer, IZO TFTs exhibited field effect mobility 20.93 cm /Vs, acceptable subthreshold swing 0.67 V/decade, reasonable I /I off ratio 1.2×10 6 . Our results demonstrate that solution-processed is promising gate candidate high-performance oxide TFT.
sci-hub.se 参考文章(40)
G. Teowee, K.C. McCarthy, F.S. McCarthy, T.J. Bukowski, D.G. Davis Jr., D.R. Uhlmann, Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films Journal of Sol-Gel Science and Technology. ,vol. 13, pp. 895- 898 ,(1998) , 10.1023/A:1008671206691
L. Zhang, J. Li, X. W. Zhang, X. Y. Jiang, Z. L. Zhang, High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature Applied Physics Letters. ,vol. 95, pp. 072112- ,(2009) , 10.1063/1.3206917
H. Z. Zhang, L. Y. Liang, A. H. Chen, Z. M. Liu, Z. Yu, H. T. Cao, Q. Wan, High-performance transparent thin-film transistor based on Y2O3/In2O3 with low interface traps Applied Physics Letters. ,vol. 97, pp. 122108- ,(2010) , 10.1063/1.3492852
George Adamopoulos, Stuart Thomas, Donal D. C. Bradley, Martyn A. McLachlan, Thomas D. Anthopoulos, Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air Applied Physics Letters. ,vol. 98, pp. 123503- ,(2011) , 10.1063/1.3568893
Shaoqiang Zhang, Rongfu Xiao, Yttrium oxide films prepared by pulsed laser deposition Journal of Applied Physics. ,vol. 83, pp. 3842- 3848 ,(1998) , 10.1063/1.366615
Jieqiong Zhang, Zhixiong Li, Liangping Shen, Cong Ye, Baoyuan Wang, Hao Wang, Characteristics of ZnO thin film transistor using Ta2O5 gate dielectrics Thin Solid Films. ,vol. 544, pp. 281- 284 ,(2013) , 10.1016/J.TSF.2013.03.103
C. Durand, C. Dubourdieu, C. Vallée, V. Loup, M. Bonvalot, O. Joubert, H. Roussel, O. Renault, Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical vapor deposition Journal of Applied Physics. ,vol. 96, pp. 1719- 1729 ,(2004) , 10.1063/1.1766412
Ataru Ichinose, Akihiro Kikuchi, Kyoji Tachikawa, Shirabe Akita, Deposition of Y2O3 buffer layers on biaxially-textured metal substrates Physica C: Superconductivity. ,vol. 302, pp. 51- 56 ,(1998) , 10.1016/S0921-4534(98)00156-7
G.Z. Geng, G.X. Liu, F.K. Shan, A. Liu, Q. Zhang, W.J. Lee, B.C. Shin, H.Z. Wu, Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition Current Applied Physics. ,vol. 14, ,(2014) , 10.1016/J.CAP.2013.12.006
C. H. Ling, J. Bhaskaran, W. K. Choi, L. K. Ah, Study of rf‐sputtered yttrium oxide films on silicon by capacitance measurements Journal of Applied Physics. ,vol. 77, pp. 6350- 6353 ,(1995) , 10.1063/1.359588