作者: M. Xiao , H. Do , W. Weresin , Q. Dai , Y. Ikeda
DOI: 10.1063/1.2176595
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摘要: Two media, A and B, are discussed to illustrate the media requirements properties for 230Gb∕in2 demonstration. B had similar layer structures except that recording layers different oxide compositions exchange break thicknesses were 21 13nm, respectively. They coercivity intrinsic switching field but showed large difference in writability. Consequently, even though they achieved performance heads down a track width of 150nm, medium could not be saturated adequately with 120nm. On other hand, possessed desirable high density formed base used