Nitride heterojunction bipolar transistor with polarization-assisted alloy hole-doped short-period superlattice emitter or collector layers
作者： Suk Choi , Noble M. Johnson , Christopher L. Chua
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摘要: A nitride heterojunction bipolar transistor with one or more polarization-assisted alloy hole-doped short-period superlattice layers are described herein. The may comprise a substrate, sub-collector region coupled to the collector portion, base portion and (SPSL) emitter portion. SPSL includes plurality of first second that alternating form emitter. have lower bandgap than layers, vertical transport through occurs via quantum tunneling. Other embodiments also described.
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