Recombination in a -Si: H: Transitions through defect states
作者： R. A. Street , D. K. Biegelsen , R. L. Weisfield
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摘要: … doping level, which we believe is probably due to a decrease in the band gap. Third, the defect … The band-tail peak is the more strongly quenched, so that at room temperature the defect …
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