Correction to "Impact-Ionization-Induced Bandwidth-Enhancement of a Si-SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz"
作者： J.-W. Shi , Y.-S. Wu , Z.-R. Li , P.-S. Chen
关键词:
摘要: We demonstrate a high-performance Si-SiGe-based vertical-illuminated avalanche photodiode (APD) operating in the 830-nm wavelength regime. The trade-off between gain and bandwidth performance of traditional APD can be overcome due to impact-ionization-induced resonant effect measured frequency responses with an internal radio-frequency gain. Furthermore, under operation, low-frequency (<100MHz) roll-off caused by slow diffusion current from n+ silicon substrate also minimized. A wide 3-dB (15.3 GHz) extremely high gain-bandwidth (428 GHz), 18% external efficiency, achieved simultaneously our device, without using complex silicon-on-insulator or germanium-on-insulator substrates block photocurrent
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