High temperature electron irradiation and isochronal annealing of p-Hg1−x Cd x Te crystals

摘要: Abstract The peculiarities of defect formation in p-Hgi-x Cd x Te crystals (x=0.195−0.205) at electron irradiation (2.3 MeV, 300 K) up to 1 × 1018 cm−2 were investigated. It was shown that the charge carrier lifetime changed with due variation free density and recombination-type centre concentration. A distance recombination centres from valence band 35–55 meV for irradiated is determined. isochronal annealing temperature ranges radiation defects electrically active defects, induced by irradiation, are found.