Electric field modulation of the band gap, dielectric constant and polarizability in SnS atomically thin layers
作者： Longfei Pan , Bingsuo Zou , Li-Jie Shi
DOI: 10.1016/J.PHYSLETA.2016.04.044
关键词:
摘要: Abstract The band structure and dielectric properties of multilayer SnS films have been investigated by density-functional theory total-energy calculations. It shows that electric field can tune the gap induce a phase transition from semiconductor to semi-metal. critical for bilayer is 0.09 V/A, which lower than MoS2(0.3 V/A), MoSe2(0.25 MoTe2(0.2 WS2(0.27 V/A) WSe2(0.20 V/A). Combining with properties, we explain reason why are more sensitive field. response character makes as potential material nano-electronic nano-optical devices.
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