Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes
作者： Tae Hoon Park , Tae Geun Kim
DOI: 10.1007/S00339-015-9345-3
关键词:
摘要: In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency low droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$ last barrier {Al}_{0.21}\hbox {Gal}_{0.79}\hbox electron blocking layer (EBL) was replaced with a graded multi-step EBLs, NUV LED showed 35 % higher 25 % more suppression droop than LED. Furthermore, detailed study grading effect EBL revealed that 10-step EBLs increase performance when compared other structures. These results are attributed polarization-induced effect, which reduces leakage increases hole injection efficiency.
springer.com
harvard.edu
elsevier.com
sci-hub.se 参考文章(23)
Xiaopeng Yu, Guanghan Fan, Shuwen Zheng, Binbin Ding, Tao Zhang, Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer IEEE Photonics Technology Letters. ,vol. 26, pp. 1132- 1135 ,(2014) , 10.1109/LPT.2014.2316546
Su Jin Kim, Tae Geun Kim, Deep‐ultraviolet AlGaN light‐emitting diodes with variable quantum well and barrier widths Physica Status Solidi (a). ,vol. 211, pp. 656- 660 ,(2014) , 10.1002/PSSA.201330258
Yuri Bilenko, Jinwei Yang, Michael Shur, Remis Gaska, Craig Moe, Gregory Garrett, Michael Wraback, Max Shatalov, Wenhong Sun, Alex Lunev, Xuhong Hu, Alex Dobrinsky, AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10% Applied Physics Express. ,vol. 5, pp. 082101- ,(2012) , 10.1143/APEX.5.082101
Jian-Yong Xiong, Shu-Wen Zheng, Guang-Han Fan, Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier IEEE Transactions on Electron Devices. ,vol. 60, pp. 3925- 3929 ,(2013) , 10.1109/TED.2013.2282218
D. A. Zakheim, A. S. Pavluchenko, D. A. Bauman, K. A. Bulashevich, O. V. Khokhlev, S. Yu. Karpov, Efficiency droop suppression in InGaN‐based blue LEDs: Experiment and numerical modelling Physica Status Solidi (a). ,vol. 209, pp. 456- 460 ,(2012) , 10.1002/PSSA.201100317
Yang Li, Shengchang Chen, Wu Tian, Zhihao Wu, Yanyan Fang, Jiangnan Dai, Changqing Chen, Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers IEEE Photonics Journal. ,vol. 5, pp. 8200309- 8200309 ,(2013) , 10.1109/JPHOT.2013.2271718
Junqiao Wu, When group-III nitrides go infrared: New properties and perspectives Journal of Applied Physics. ,vol. 106, pp. 011101- ,(2009) , 10.1063/1.3155798
Liwen Cheng, Shudong Wu, Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN–AlGaN–GaN Last Barrier and Without an AlGaN Electron Blocking Layer IEEE Journal of Quantum Electronics. ,vol. 50, pp. 261- 266 ,(2014) , 10.1109/JQE.2014.2305451
Yen-Kuang Kuo, Yu-Han Chen, Jih-Yuan Chang, Miao-Chan Tsai, Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells Physica Status Solidi (a). ,vol. 209, pp. 2078- 2081 ,(2012) , 10.1002/PSSA.201228274
I. Vurgaftman, J. R. Meyer, L. R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys Journal of Applied Physics. ,vol. 89, pp. 5815- 5875 ,(2001) , 10.1063/1.1368156